DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications

A broadband low-loss, ultra-low-power consumption transmit/receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, and P1dB better than 12 dBm with DC power consumption of less than 6 mW.